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 MDS400
400 Watts Pk, 45 Volts, 32s, 2% Avionics 1030-1090 MHz
GENERAL DESCRIPTION
The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emiter Voltage BVebo Collector to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 1450 Watts
55 Volts 4.0 Volts 40 Amps
-40 to + 200C + 200C
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Po Pin Pg h VSWR1 CHARACTERISTICS Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F =1030/1090 MHz Vcc = 45 Volts Pulse Width = 32s Duty Factor = 2 % At Rated Power MIN 400 90 6.5 35 10:1 TYP MAX UNITS Watts Watts dB %
BVces BVebo Hfe Rjc
Collector to Emitter Breakdown Emitter to Base Breakdown Current Gain Thermal Resistance
Ic = 50 mA Ie = 30 mA Vce = 5 V, Ic = 1 A Tc = 25 oC
55 3.5 10 0.12
Volts Volts
o
C/W
Issue September 22, 1995
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120


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